Method and apparatus providing improved thermal conductivity of strain relaxed buffer

ABSTRACT

A structure includes a substrate and a strain relaxed buffer (SRB) that has a bottom surface disposed on the substrate and an opposite top surface. The SRB is formed to have a plurality of pairs of layers, where a given pair of layers is composed of a layer of Si 1-x Ge x  and a layer of Si. The structure further includes a plurality of transistor devices formed above the top surface of the SRB and at least one contact disposed vertically through the top surface of the SRB and partially through a thickness of the SRB. The at least one contact is thermally coupled to at least one of the plurality of the Si layers for conducting heat out of the SRB via the at least one of the plurality of Si layers. A method to form the structure is also disclosed.

CROSS-REFERENCE TO A RELATED US PATENT APPLICATION

This patent application is a continuation application of copending U.S.patent application Ser. No. 14/745,666, filed on Jun. 22, 2015, thedisclosure of which is incorporated by reference herein in its entirety.

TECHNICAL FIELD

The various embodiments of this invention relate generally tosemiconductor devices and fabrication techniques and, more specifically,relate to the fabrication of semiconductor transistor devices inconjunction with a strain relaxed buffer.

BACKGROUND

Tensile strained silicon (Si) enhances electron mobility by lifting theconduction band degeneracies, reducing carrier scattering and increasingthe population of carriers in sub-bands with lower transverse effectivemass. A strain relaxed buffer (SRB) is an important element whenfabricating strained channel CMOS transistors. As an example, a SiGe SRBcan be used when growing on a Si substrate a tensile strained Si channelfor nFET devices and compressively strained Ge or high Ge percentageSiGe for pFET devices. Typically a thick (e.g., about one micron) SRBlayer is needed to ensure a low defect density in a channel region ofthe nFET and pFET devices.

However, SiGe has a lower thermal conductivity than Si. For example, thethermal conductivity of Si_(1-x)Ge_(x) (x=0.50) is only about 10% of thethermal conductivity of pure Si. The presence of the relatively thickSiGe SRB, in conjunction with the low thermal conductivity exhibited bySiGe, results in a poor heat dissipation capability of the SRB layerthat in turn can negatively impact the on-chip power budget due todifficulties in power dissipation.

SUMMARY

An aspect of the non-limiting embodiments of this invention is astructure that comprises a substrate and a strain relaxed bufferdisposed on a surface of the substrate. The strain relaxed buffer has abottom surface disposed on the surface of the substrate and an oppositetop surface. The strain relaxed buffer is comprised of a plurality ofpairs of layers, where a given pair of layers is composed of a layer ofSi_(1-x)Ge_(x) and a layer of Si. The structure further includes aplurality of transistor devices formed above the top surface of thestrain relaxed buffer and at least one contact disposed verticallythrough the top surface of the strain relaxed buffer and partiallythrough a thickness of the strain relaxed buffer. The at least onecontact is thermally coupled to at least one of the plurality of the Silayers for conducting heat out of the strain relaxed buffer via the atleast one of the plurality of Si layers.

Another aspect of the non-limiting embodiments of this invention is amethod that comprises providing a substrate; forming a strain relaxedbuffer on a surface of the substrate, the strain relaxed buffer having abottom surface disposed on the surface of the substrate and an oppositetop surface, the strain relaxed buffer being formed to comprise of aplurality of pairs of layers, where a given pair of layers is composedof a layer of Si_(1-x)Ge_(x) and a layer of Si; forming a plurality oftransistor devices above the top surface of the strain relaxed buffer;and forming at least one contact through the top surface of the strainrelaxed buffer and partially through a thickness of the strain relaxedbuffer, the at least one contact being thermally coupled to at least oneof the plurality of the Si layers for conducting heat out of the strainrelaxed buffer via the at least one of the plurality of Si layers.

A further aspect of the non-limiting embodiments of this invention is amethod to operate an integrated circuit. The method includes providingat least one transistor disposed above a multi-layered strain relaxedbuffer comprised of alternating layers of Si_(1-x)Ge_(x) and Si. Themethod further includes removing heat generated by the at least onetransistor by transporting the heat laterally, primarily through one ormore of the Si layers of the strain relaxed buffer, to a thermal conduitdisposed vertically in the strain relaxed buffer, and then transportingthe heat vertically through the thermal conduit and away from the strainrelaxed buffer towards a top surface of the integrated circuit.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIGS. 1-7 are each an enlarged cross-sectional view showing variousinitial, intermediate and completed or substantially completedstructures that are fabricated in accordance with embodiments of thisinvention, wherein the various layer thicknesses and other dimensionsare not necessarily drawn to scale. More specifically:

FIG. 1 shows a starting structure that includes a bulk Si substrate anda multilayered SRB on a top surface;

FIG. 2 shows a first mask and a result of a first doping process;

FIG. 3 shows a second mask 20A and a result of a second doping process;

FIG. 4 illustrates the structure after removal of the second mask andthe growth of a tensile Si layer in an nFET region and the growth of acompressive SiGe layer in a pFET region;

FIG. 5 shows the structure after selectively masking and etchingportions of the tensile Si layer and the underlying doped PTS layer inthe nFET region 14 and portions of the compressive SiGe layer and theunderlying PTS layer in the pFET region to form Si fins and SiGe fins;

FIG. 6 shows the structure of FIG. 5 after a dielectric layer is formedon the top surface, a device STI is formed between the nFET region andthe region 16, and after well contacts are formed into the SRB layers;and

FIG. 7 shows the structure of FIG. 6 after the formation of gatestructures and after the deposition of an inter-layer dielectric (ILD)layer. FIG. 7 also illustrates heat flow paths through the SRB to thewell contacts.

FIG. 8 is a graph that plots the thermal conductivity vs. composition xof Si_(1-x)Ge_(x).

DETAILED DESCRIPTION

The word “exemplary” is used herein to mean “serving as an example,instance, or illustration.” Any embodiment described herein as“exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments. All of the embodiments described inthis Detailed Description are exemplary embodiments provided to enablepersons skilled in the art to make or use the invention and not to limitthe scope of the invention which is defined by the claims.

The terms “epitaxial growth and/or deposition” and “epitaxially formedand/or grown” mean the growth of a semiconductor material on adeposition surface of a semiconductor material, in which thesemiconductor material being grown has the same crystallinecharacteristics as the semiconductor material of the deposition surface.In an epitaxial deposition process, the chemical reactants provided bysource gases are controlled and the system parameters are set so thatthe depositing atoms arrive at the deposition surface of thesemiconductor substrate with sufficient energy to move around on thesurface and orient themselves to the crystal arrangement of the atoms ofthe deposition surface. Therefore, an epitaxial semiconductor materialhas the same crystalline characteristics as the deposition surface onwhich it is formed. For example, an epitaxial semiconductor materialdeposited on a {100} crystal surface will take on a {100} orientation.In some embodiments, epitaxial growth and/or deposition processes areselective to forming on a semiconductor surface, and do not depositmaterial on dielectric surfaces, such as silicon dioxide or siliconnitride surfaces.

Examples of various epitaxial growth process apparatuses that aresuitable for use in implementing the embodiments of this inventioninclude, but are not limited to, rapid thermal chemical vapor deposition(RTCVD), low-energy plasma deposition (LEPD), ultra-high vacuum chemicalvapor deposition (UHVCVD), atmospheric pressure chemical vapordeposition (APCVD), molecular beam epitaxy (MBE) and chemical vapordeposition (CVD). The temperature for an epitaxial deposition processtypically ranges from about 550° C. to about 900° C. Although highertemperature will typically result in faster deposition of thesemiconductor material, the faster deposition may also result in crystaldefects and film cracking.

It is pointed out that while certain aspects and embodiments of thisinvention can be employed with bulk substrates such as siliconsubstrates, the invention can also be realized using a semiconductor oninsulator (SOI) substrate.

The embodiments of this invention provide a method and structure to formstrained devices in conjunction with an SRB which has an improvedthermal dissipation capability. The embodiments form thermallyconductive vias in graded buffer layers that overcome the problems ofheating resulting from poor thermal transport in the conventional SiGeSRB.

Referring to FIG. 1, a starting structure includes a bulk Si substrate10. The substrate 10 may have, for example, a {100} crystal surface andcan have any desired thickness. On the surface of the substrate 10 isgrown a strain relaxed buffer (SRB) 12. In accordance with an aspect ofthis invention the SRB 12 is grown as a plurality of alternating pairsof SiGe and Si layers. In a non-limiting embodiment there can be, forexample, 5-20 layer pairs (10-40 discrete layers). The multi-layered SRB12 can have a thickness in a range of, for example, about 500 nm toabout 2 μm. As an example, and if one assumes a total SRB 12 thicknessof about 500 nm and 10 layer pairs, then each individual SiGe and Silayer has a thickness of about 25 nm.

As was noted above, the Si layers have a significantly higher thermalconductivity than the SiGe layers. For example,Si(x=0)1.3 W cm⁻¹K⁻¹, whileSi_(1-x)Ge_(x)≈(0.046+0.084x) W cm⁻¹K⁻¹, 0.2<x<0.85; 300 K.

Reference can also be made to the graph shown in FIG. 8 that plotsthermal conductivity vs. composition x of Si_(1-x)Ge_(x).

An initial shallow trench isolation (STI) 18 can be formed by maskingand etching at least partially through the SRB 12 layer stack and thengrowing a dielectric (e.g., an oxide) in the trench formed by theetching process. The initial STI 18 partitions the structure into whatwill become an nFET region 14 and a pFET region 16.

FIG. 2 shows the application of a mask 20A to cover the nFET region 14followed by a doping process, e.g., a punch through doping (PTS)process, in the pFET region 16 to dope the top-most SiGe layer to be anN-type layer 22A. The PTS in essence provides a doped layer of oppositepolarity that enhances electrical isolation of a subsequently formed finstructure. The doping process can use, for example, gas phase doping orion implantation, and suitable N-type dopant species can be, forexample, As or P.

FIG. 3 shows a result of the removal of the mask 20A and the applicationof a second mask 20B to cover the pFET region 16. This is followed byanother PTS process performed in the nFET region 14 to dope the top-mostSiGe layer to be a P-type layer 22B. This doping process can also use,for example, gas phase doping or ion implantation, and a suitable P-typedopant species can be, for example, Boron.

The steps shown in FIGS. 2 and 3 could be performed in the oppositeorder. In FIGS. 2 and 3 an exemplary range of dopant concentration inthe layers 22A and 22B can be about 5e17 to about 1e19 cm³.

FIG. 4 illustrates the structure after removal of the mask 20B and thegrowth of a tensile Si layer 24 over the doped SiGe layer 22B (PTS layer22B) in the nFET region 14 and the growth of a compressive SiGe layer 26over the doped SiGe layer 22A (PTS layer 22A) in the pFET region 16. Onesuitable thickness for the tensile Si layer 24 and the compressive SiGelayer 26 is in a range of about 20 nm to about 60 nm, such as about 40nm. The percentage of Ge in the compressive SiGe layer 26 is madegreater than the percentage of Ge in the layers of the SRB 12. As anon-limiting example, if in the Si_(1-x)Ge_(x) layers of the SRB 12x=0.25, then in the compressive SiGe layer 26 x>0.25, e.g., x=0.30 orgreater. This process can use several mask application and removalprocesses, and the tensile Si layer 24 and the compressive SiGe layer 26can be grown in either order.

In this case the growth of a substantially pure (x=0) Si layer willresult in the growth of a tensile stressed Si layer 24 on the doped SiGelayer 22B. Also in this case the growth of the SiGe layer 26 results ina compressive stressed layer on the doped SiGe layer 22A, assuming thatin the SiGe layer 26 the value of x is made greater than the percentageof Ge in the doped SiGe layer 22.

FIG. 5 shows the structure after selectively masking and etchingportions of the tensile. Si layer 24 and the underlying doped PTS layer22B in the nFET region 14, and portions of the compressive SiGe layer 26and the underlying PTS layer 22A in the pFET region 16, thereby formingSi fins 30 and SiGe fins 32. Each of the fins 30 and 32 can have aheight, relative to a top surface of the SRB Si layer beneath the PTSlayers 22A and 22B, in an exemplary range of about 25 nm to about 70 nm,with 45 nm being one suitable value. Each of the fins 30 and 32 couldhave a corresponding width (W) in an exemplary range of about 4 nm toabout 10 nm. A bottom portion of each fin includes a portion of the PTSlayer 22 that is disposed on a Si layer of the SRB 12.

FIG. 6 shows the structure at another intermediate fabrication point. Adielectric layer 40 is formed on the top surface (e.g., a layer ofoxide) and patterned. A final device STI 38 is formed between the nFETregion 14 and the pFET region 16. Openings are then defined and madepartially through the SRB 12 to a depth, preferably, that is less thanthe depth of the STI 38 in the SRB 12. The openings may be referred tofor convenience as precursors to well contacts or thermal conduitswherein a dielectric liner 36 is grown (e.g., an oxide or a nitride,with TiN being one suitable material) followed by the deposition of ametal or some other material having good thermal conductivity. Thecompleted structure is referred to for convenience in FIG. 6 as a wellcontact 34. The well contacts 34 can have an exemplary depth into theSRB 12, assuming a total thickness of the SRB 12 in the range of, forexample, about 500 nm to about 2 μm, of about 350 nm to about 1.5 μm.Tungsten and copper are two non-limiting examples of suitable metalsthat can be used to form the well contacts 34. About 30 nm to about 200nm is an exemplary width for the well contacts 34. The well contactwidth in a particular instantiation of this invention is generallygoverned by a tradeoff between an amount of desired improvement inthermal conductivity vs. the additional layout area that is consumed.

The well contacts 34 function, in accordance with aspects of thisinvention, as thermal conduits that enable heat, generated at least inpart by operation of nFET and pFET transistors yet to be formed, to beextracted primarily via the higher (relative to the SiGe layers) thermalconductivity Si layers of the SRB 12 (exemplary heat flow paths areshown in FIG. 7).

In some embodiments the well contacts 34 may also be used electricallyin the completed structure (e.g., to apply a well bias potential), andthus the electrical conductivity characteristics can also be taken intoconsideration along with the thermal conductivity characteristics of theselected material for the well contacts 34.

FIG. 7 shows the structure of FIG. 6 after the formation of gatestructures 42A and 42B over a channel region of the fins 30 and 32 inthe nFET regions 14 and the pFET region 16, respectively. The gatestructures 42A and 42B can be conventional and can include a gatedielectric (e.g., an oxide or a high dielectric constant (hi-k)material) and any desired and suitable gate metal or metal system(including work function-selected metals and metal systems).

As non-limiting examples, this can be achieved by depositing a thinoxide layer (interface SiO₂ growth) on the fins 30 and 32 followed bygate dielectric deposition and gate metal deposition. For example, thegate dielectric can be formed as a layer of high dielectric constant(high-k) material comprising a dielectric metal oxide and having adielectric constant that is greater than the dielectric constant ofsilicon nitride (7.5). The high-k dielectric layer may be formed bymethods well known in the art including, for example, chemical vapordeposition (CVD), atomic layer deposition (ALD), molecular beamdeposition (MBD), pulsed laser deposition (PLD) and liquid source mistedchemical deposition (LSMCD), etc. The dielectric metal oxide comprises ametal and oxygen, and optionally nitrogen and/or silicon. Exemplaryhigh-k dielectric materials include HfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂,SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y), ZrO_(x)N_(y), La₂O_(x)N_(y),Al₂O_(x)N_(y), TiO_(x)N_(y), SrTiO_(x)N_(y), LaAlO_(x)N_(y),Y₂O_(x)N_(y), a silicate thereof, and an alloy thereof. Each value of xis independently established from about 0.5 to about 3.0 and each valueof y is independently established from about 0 to about 2.0. Thethickness of the high-k dielectric layer may be from about 1 nm to about10 nm, and more preferably from about 1.5 nm to about 3 nm. The high-kdielectric layer can have an effective oxide thickness (EOT) on theorder of, or less than, about 1 nm. The gate metal can be depositeddirectly on a top surface of the high-k dielectric layer by, forexample, chemical vapor deposition (CVD), physical vapor deposition(PVD), or atomic layer deposition (ALD). As non-limiting examples thegate metal can include a metal system selected from one or more of TiN,TiC, TaN, TaC, TaSiN, HfN, W, Al and Ru, and may be selected at least inpart based on the desired work function (WF) of the device (nFET orpFET), as is known.

FIG. 7 can be considered as a cross-sectional view through the center ofthe gate structures 42A and 42B and thus appropriately doped source anddrain regions, and corresponding source and drain contacts, that areadjacent to the gate structures (into and out of the plane of thedrawing of FIG. 7) are not shown.

After forming the gate structures 42A and 42B the deposition of aninter-layer dielectric (ILD) 44 is accomplished. The ILD layer 44 isthen patterned and openings are formed wherein gate contacts 46 (anyconventional electrically conductive material contacts) and (at least)thermally conductive contacts 48 are formed. The thermally conductivecontacts 48 are connected on a top surface to lateral metallization thatcan provide and/or be coupled to a heat sink structure for dissipatingthe heat conducted from the SRB 12.

The dotted arrows in FIG. 7 show the direction of heat flow in thestructure during operation. As can be seen the heat flow from operatingnFET and pFET transistors is primarily conducted out of the structurethrough the higher thermal conductivity Si layers of the SRB 12 to thewell contacts 34 and then though the thermal contacts 48. The presenceof the Si layers in the SRB 12 thus provides a means to more efficientlyand rapidly remove heat from the structure, in conjunction with thecontacts 34 and the thermal contacts 48. The well contacts 34 are formedto a depth in the SRB 12 that provides a desired amount of thermalcoupling to the Si layers of the SRB 12. The depth can be a function ofat least a number of Si layers above a bottom of the STI 38 and thethickness of the Si layers.

Although described above with reference to two well contacts 34 and twothermal contacts 48 serving a single transistor, in some embodimentsthere can be more or less than two well contacts 34 and two thermalcontacts 48 per transistor. Furthermore, depending on the device layoutit is possible for a single well contact 34 and thermal contact 48 toserve more than one transistor. Also, while the Si layers and SiGelayers of the SRB 12 were described above as having the same thickness,in some embodiments these layers can have different thicknesses. Also,it is assumed that any anneal processes performed during fabrication ofthe structure shown in FIGS. 1-7 do not expose the structure to anamount of heat for an amount of time that would be sufficient to causein the SRB 12 any appreciable amount of diffusion of the Ge from theSiGe layers into the Si layers, thereby lowering the thermalconductivity of the Si layers.

It can be seen that an aspect of the embodiments of this invention isthe provision of a method to operate an integrated circuit. The methodincludes providing at least one transistor disposed above amulti-layered strain relaxed buffer comprised of alternating layers ofSi_(1-x)Ge_(x) and Si. The method further includes removing heatgenerated by the at least one transistor by transporting the heatlaterally, primarily through one or more of the Si layers of the strainrelaxed buffer, to a thermal conduit disposed vertically in the strainrelaxed buffer, and then transporting the heat vertically through thethermal conduit and out of the strain relaxed buffer towards a topsurface of the integrated circuit. In the method the value of x in theSi_(1-x)Ge_(x) layers is non-zero and may be in an exemplary range ofabout 0.10 to about 0.90 or greater.

It is to be understood that the exemplary embodiments discussed abovewith reference to FIGS. 1-7 can be used on common variants of the FETdevice including, e.g., FET devices with multi-fingered FIN and/or gatestructures and FET devices of varying gate width and length. Inaddition, the embodiments of this invention can be used with transistordevices other than FinFETs, such as with planar FETs and with bipolartransistor devices.

Moreover, transistor devices can be connected to metalized pads or otherdevices by conventional ultra-large-scale integration (ULSI)metalization and lithographic techniques.

Integrated circuit dies can be fabricated with various devices such as afield-effect transistors, bipolar transistors, metal-oxide-semiconductortransistors, diodes, resistors, capacitors, inductors, etc., havingthermal contacts that are formed using methods as described herein. Anintegrated circuit in accordance with the present invention can beemployed in applications, hardware, and/or electronic systems. Suitablehardware and systems in which such integrated circuits can beincorporated include, but are not limited to, personal computers,communication networks, electronic commerce systems, portablecommunications devices (e.g., cell phones), solid-state media storagedevices, functional circuitry, etc. Systems and hardware incorporatingsuch integrated circuits are considered part of this invention. Giventhe teachings of the invention provided herein, one of ordinary skill inthe art will be able to contemplate other implementations andapplications of the techniques of the invention.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do, not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiments were chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

As such, various modifications and adaptations may become apparent tothose skilled in the relevant arts in view of the foregoing description,when read in conjunction with the accompanying drawings and the appendedclaims. As but some examples, the use of other similar or equivalentsemiconductor fabrication processes, including deposition processes andetching processes may be used by those skilled in the art. Further, theexemplary embodiments are not intended to be limited to only thosematerials, metals, insulators, dopants, dopant concentrations, layerthicknesses and the like that were specifically disclosed above.Furthermore, for a FinFET embodiment of this invention any particulartransistor can comprise one, two, three or more fin structures that areelectrically coupled to a gate conductor. Any and all such and similarmodifications of the teachings of this invention will still fall withinthe scope of this invention.

What is claimed is:
 1. A structure, comprising: a substrate; a strainrelaxed buffer disposed on a surface of the substrate, the strainrelaxed buffer having a bottom surface disposed on the surface of thesubstrate and an opposite top surface, the strain relaxed buffer beingcomprised of a plurality of pairs of layers, where a given pair oflayers is composed of a layer of Si_(1-x)Ge_(x) and a layer of Si; aplurality of transistor devices formed above the top surface of thestrain relaxed buffer; and at least one contact disposed verticallythrough the top surface of the strain relaxed buffer and partiallythrough a thickness of the strain relaxed buffer, the at least onecontact being disposed transverse to a side of a fin of at least onetransistor of the plurality of transistor devices, the at least onecontact being thermally coupled to at least one of the plurality of theSi layers for conducting heat out of the strain relaxed buffer via theat least one of the plurality of Si layers.
 2. The structure as in claim1, further comprising a layer of dielectric material disposed on theplurality of transistors and a thermal contact made through the layer ofdielectric material and connected to the contact for conducting heatfrom the contact to a top surface of the structure.
 3. The structure asin claim 1, where there are about 5 to about 20 pairs of layers.
 4. Thestructure as in claim 1, where the strain relaxed buffer has a thicknessin a range of about 500 nm to about 2 μm.
 5. The structure as in claim4, where the contact is comprised of a metal and is formed to a depth inthe strain relaxed buffer in a range of about 350 nm to about 1.5 μm. 6.The structure of claim 5, where the contact has a width in a range ofabout 30 nm to about 200 nm.
 7. The structure as in claim 1, where afirst one of the transistor devices is an N-type FET that comprises atleast one fin composed of tensile Si disposed on a first doped layer ofSi_(1-x)Ge_(x) of the strain relaxed buffer, and where a second one ofthe transistor devices is a P-type FET that comprises at least one fincomposed of compressive Si_(1-x)Ge_(x) disposed on a second doped layerof Si_(1-x)Ge_(x) of the strain relaxed buffer.
 8. The structure as inclaim 7, where a value of x in the compressive Si_(1-x)Ge_(x) is greaterthan a value of x in the layers of Si_(1-x)Ge_(x) in the strain relaxedbuffer.
 9. The structure as in claim 1, where a first one of thetransistor devices is an N-type FET that comprises at least one fincomprised of a layer of tensile Si disposed above a layer ofSi_(1-x)Ge_(x) that is doped P-type, and where a second one of thetransistor devices is a P-type FET that comprises at least one fincomprised of a layer of compressive Si_(1-x)Ge_(x) disposed above alayer of Si_(1-x)Ge_(x) that is doped N-type.